Models, biasing, and performance of discrete devices

The transistor in the circuit below has a very high value of $$beta$$.

 The value (V) of the collector voltage $$V_o$$ is most nearly:

A.  6.0
B.  4.0
C.  2.0
D.  1.3

Let $$R_C=600Omega$$, and let $$R_E=500Omega$$.  When $$R_1=2.00kOmega$$ and $$R_2=1.00kOmega$$, the value $$I_C$$ (mA) is most nearly:

$$R_g=100Omega$$ , $$C_o=50.0muF$$,  $$C_1=10muF$$, $$C_2=10muF$$, $$V_(BE)=0.7V$$

A.  10
B.  19
C.  24
D.  27

At 80°F the contact potential for a given p-n junction is 0.026 V. If the temperature is raised to 180°F, the increase (mV) in the contact potential will be:   ________________