The transistor in the circuit below has a very high value of $$beta$$.
The value (V) of the collector voltage $$V_o$$ is most nearly:
A. 6.0
B. 4.0
C. 2.0
D. 1.3
To solve this equation, we first use KVL to set up an equation down the right side of our circuit. Since our beta value is very high, and since we know , we can conclude that :
In order to continue solving this equation, we must first calculate the value of . We can do this according to these equations:
can be found by using the equation for a voltage divider. Since we know our beta value is very high, we do not need to bother finding since the expression will be approximately 0:
Plugging these values back into our original equations to find :
Now we can plug in our value into our original KVL equation to get our current value.
Finally, knowing the current travelling through , we can find the collector voltage, .
Therefore, our answer is A, 6.0.
Let $$R_C=600Omega$$, and let $$R_E=500Omega$$. When $$R_1=2.00kOmega$$ and $$R_2=1.00kOmega$$, the value $$I_C$$ (mA) is most nearly:
$$R_g=100Omega$$ , $$C_o=50.0muF$$, $$C_1=10muF$$, $$C_2=10muF$$, $$V_(BE)=0.7V$$
A. 10
B. 19
C. 24
D. 27
At 80°F the contact potential for a given p-n junction is 0.026 V. If the temperature is raised to 180°F, the increase (mV) in the contact potential will be: ________________